1. DSpace at Rajamangala University of Technology Thanyaburi
  2. คณะวิทยาศาสตร์และเทคโนโลยี (Faculty of Science and Technology)
  3. ประชุมวิชาการ (Proceedings - SCI)
Please use this identifier to cite or link to this item: http://www.repository.rmutt.ac.th/xmlui/handle/123456789/1321
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dc.contributor.authorSachchidaNand Shukla and Susmrita Srivastava
dc.date.accessioned2014-02-12T03:45:30Z
dc.date.accessioned2020-09-24T04:46:00Z-
dc.date.available2014-02-12T03:45:30Z
dc.date.available2020-09-24T04:46:00Z-
dc.date.issued2014
dc.identifier.urihttp://www.repository.rmutt.ac.th/dspace/handle/123456789/1321-
dc.descriptionThe 15th International Conference of International Academy of Physical Sciencesen_US
dc.description.abstractNew circuit model of MOSFET based small-signal narrow-band amplifier is proposed and qualitatively analyzed. Proposed amplifier circuit uses identical MOSFETs in Triple Darlington configuration and provides an optimum performance for the input signals swinging below 15mV. In the narrow-band performance range, the proposed amplifier produces simultaneously high voltage and current gains with low harmonic distortion. The proposed amplifier can be used to process audio range signal excursions. Variations in voltage gain as a function of frequency and different biasing resistances, temperature dependency of performance parameters, bandwidth and total harmonic distortion of the amplifiers are also perused.en_US
dc.language.isoenen_US
dc.publisherRajamangala University of Technology Thanyaburi. Faculty of Sciences and Technologyen_US
dc.subjectSmall-signal amplifiersen_US
dc.subjectDarlington amplifiersen_US
dc.subjectCommon Source MOS amplifiersen_US
dc.titleNew circuit model of small-signal amplifier developed by using MOSFETS in triple darlington configurationen_US
dc.typeProceedingen_US
Appears in Collections:ประชุมวิชาการ (Proceedings - SCI)

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